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smps mosfet hexfet power mosfet

! through are on page 8 so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a
" #$ % parameter max. units r ja maximum junction-to-ambient 50 c/w thermal resistance absolute maximum ratings symbol parameter max. units v ds drain-source voltage 20 v v gs gate-to-source voltage 12 v i d @ t a = 25c continuous drain current, v gs @ 10v 16 i d @ t a = 70c continuous drain current, v gs @ 10v 13 a i dm pulsed drain current 130 p d @t a = 25c maximum power dissipation 2.5 w p d @t a = 70c maximum power dissipation 1.6 w linear derating factor 0 .02 w/c t j , t stg junction and storage temperature range -55 to + 150 c base part number form quantity tube/bulk 95 IRF7456PBF-1 tape and reel 4000 irf7456trpbf-1 package type standard pack orderable part number IRF7456PBF-1 so-8 features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliabilit y v ds 20 v r ds(on) max (@v gs = 10v) 0.0065 q g (typical) 41 nc i d (@t a = 25c) 16 a

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! parameter min. typ. max. units conditions g fs forward transconductance 44 ??? ??? s v ds = 10v, i d = 16a q g total gate charge ??? 41 62 i d = 16a q gs gate-to-source charge ??? 9.7 15 nc v ds = 16v q gd gate-to-drain ("miller") charge ??? 18 27 v gs = 5.0v, t d(on) turn-on delay time ??? 20 ??? v dd = 10v t r rise time ??? 25 ??? i d = 1.0a t d(off) turn-off delay time ??? 50 ??? r g = 6.0 t f fall time ??? 52 ??? v gs = 4.5v c iss input capacitance ??? 3640 ??? v gs = 0v c oss output capacitance ??? 1570 ??? v ds = 15v c rss reverse transfer capacitance ??? 330 ??? pf ? = 1.0mhz dynamic @ t j = 25c (unless otherwise specified) ns static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 ??? ??? v v gs = 0v, i d = 250 a v (br)dss / t j breakdown voltage temp. coefficient ??? 0.024 ??? v/c reference to 25c, i d = 1ma ??? 0.00470.0065 v gs = 10v, i d = 16a ??? 0.00570.0075 v gs = 4.5v, i d = 13a ??? 0.011 0.020 v gs = 2.8v, i d = 3.5a v gs(th) gate threshold voltage 0.6 ??? 2.0 v v ds = v gs , i d = 250 a ??? ??? 20 a v ds = 16v, v gs = 0v ??? ??? 100 v ds = 16v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 200 v gs = 12v gate-to-source reverse leakage ??? ??? -200 na v gs = -12v parameter typ. max. units e as single pulse avalanche energy ??? 250 mj i ar avalanche current ??? 16 a e ar repetitive avalanche energy ??? 0.25 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 2.5a, v gs = 0v t rr reverse recovery time ??? 48 72 ns t j = 25c, i f = 2.5a q rr reverse recoverycharge ??? 74 110 nc di/dt = 100a/ s diode characteristics 2.5 130 "

! fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.0v 2.7v 2.5v 2.25v 2.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.0v 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 4.5v 3.0v 2.7v 2.5v 2.25v 2.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.0v fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 16a 2.0 2.2 2.4 2.6 2.8 3.0 3.2 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 15v 20 s pulse width

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! fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 1 10 100 0 1000 2000 3000 4000 5000 6000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 20 40 60 80 0 2 4 6 8 10 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 16a v = 16v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 2.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig 8. maximum safe operating area #

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! fig 11. maximum effective transient thermal impedance, junction-to-case 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms 25 50 75 100 125 150 0 5 10 15 20 t , case temperature ( c) i , drain current (a) c d fig 9. maximum drain current vs. case temperature %
1 0.1 % % &' % + - % #$%

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! fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 7.2a 10a 16a 0 20406080100 i d , drain current (a) 0.0046 0.0050 0.0054 0.0058 0.0062 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = 10v v gs = 4.5v 0 4 8 12 16 v gs, gate -to -source voltage (v) 0.004 0.006 0.008 0.010 0.012 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = 16a

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! e1 d e y b a a1 h k l .189 .1497 0 .013 .050 b as ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 b as ic 0.635 b as ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012aa. not e s : 1. dimens ioning & t ole rancing pe r as me y14.5m-1994. 2. controlling dimension: millimeter 3. dimens ions are s hown in mil l imet e rs [inche s ]. 5 dimens ion doe s not incl ude mol d prot rus ions . 6 dimens ion doe s not incl ude mol d prot rus ions . mold prot rus ions not t o e xce e d 0.25 [.010]. 7 dimens ion is t he l engt h of l ead f or s ol de ring t o a s ubs t rat e. mold prot rus ions not t o e xce e d 0.15 [.006]. so-8 part marking information p = disgnates lead - free example: t his is an irf7101 (mosfet) f 7101 xxxx int ernational logo rectifier part number lot code product (optional) dat e code (yww) y = l as t digit of t he ye ar ww = we e k a = assembly site code

so-8 package outline(mosfet & fetky) dimensions are shown in milimeters (inches)

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! 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel ( dimensions are shown in milimeters (inches) ) repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 2.0mh, r g = 25 , i as = 16a. pulse width 300 s; duty cycle 2%. when mounted on 1 inch square copper board, t<10 sec

ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s td-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jes d47f ?? guidelines) moisture sensitivity level so-8

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